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Analysis of recombination losses in screen-printed aluminium induced back surfac
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Title: Analysis of recombination losses in screen-printed aluminium induced back surface fields of silicon solar cells by numerical device simulation

Speaker: Yifeng Chen

时间:2013年4月19日上午10:30-11:30

地点:北京大学深圳研究生院G-205
主办方:新材料学院

C.V.:
Mr. Yifeng Chen got his bachalor in optics in 2008 in Sun Yat-sen University. From 2008 to now, He upgraded his Masters to his PhD study in Institute for Solar Energy Systems in Sun Yat-sen University in China. In 2011, he worked as a summer intern in the R&D department of Trinasolar companny for three months. In 2012, he worked as a co-training Ph.D student in the group of PD Dr. Pietro P. Altermatt in Hannover University in Germany for one year.
 
Abstract:

Local Al-BSF is a current topic in research and development of crystalline Si solar cells for mass production. It has been difficult to measure the recombination properties of Al-BSFs, e.g. in terms of their saturation current J0. However, the simulation models of Al-BSFs have significantly improved in recent years. In this research, we apply numerical device modelling, based on incomplete ionization and updated parameters of Al-O complex in the Al-BSF region, to analyse the recombination dynamics in cells being fully covered with Al-BSF, or having screen-printed Al-BSF fingers and rear Al2O3 passivation layer. With an improved emitter (feasible for mass production), and with screen-printed both the front metallization and rear Al-BSF fingers, about 19.6% or 20.3% cell efficiency may be reached after light-induced degradation (LID) or deactivation of the B-O complex. With a J0 = 50 fA/cm2 emitter, we show potential efficiency of 21.4% for point-contact PREC structure with deactivation wafer.