Personal Profile
I’m the PI of Ferro-electronic Materials Lab. Our lab aim to develop advanced nanoelectronic materials and devices with high response and low energy consumption. We are dedicated to the understanding and development of a unique category of materials called ferroelectrics, which possess voltage-switchable spontaneous polarization. We aim to uncover the materials’ rich physical mechanisms and multi-field interactions, to achieve precise property control and modification through hierarchical micro-/nano-structure designs, and to push their applications in energy storage/conversion, data computing/storage, sensing, actuation, etc.
Education Background
2020, Ph.D. in Materials Science & Engineering, Tsinghua University (graduated with honors)
2019–2020, Joint-training Ph.D., Materials Science & Metallurgy, University of Cambridge
2015, B.E. in Materials Science & Engineering, Tsinghua University (graduated with honors)
Academic Appointments
2024–Present: Assistant Professor, School of Advanced Materials, Shenzhen Graduate School, Peking University
2021–2024: Postdoctoral Researcher, Materials Science & Engineering, University of California, Berkeley
2020–2021: Research Fellow, School of Physical and Mathematical Science, Nanyang Technological University
Research Interests
・Functional electronic materials (ceramics/films/heterostructures) and micro-/nano- devices.
・Ferroelectrics, antiferroelectrics, piezoelectrics, and relaxors.
・Dielectric energy storage, electromechanical transduction, ferroelectric-based nanoelectronics.
・Designing materials with new concepts (high-entropy, defects, heterostrain, etc).
Selected Honors and Awards
・National Natural Science Award (Second-Class) of P.R. China, 2023.
・Dimitris N Chorafas Foundation Award for Young Scientists (30 awardees/year worldwide), 2021.
・Outstanding doctoral dissertation of Chinese Ceramic Society, 2020.
・Outstanding Ph.D. Graduate of Universities in Beijing, 2020.
・Outstanding Young Scholar of Tsinghua University (10 awardees out of >30, 000 postgraduates), 2020.
・Top 10 Scientific Advances in Chinese Universities (Selected by Ministry of Education of China), 2019.
・Top Scholarship for Postgraduates, Tsinghua University (10 awardees out of >30, 000 postgraduates), 2019.
・Outstanding B.E. Graduate of Tsinghua University (2015).
近期发表的学术论文
[1] H. Pan, F. Li, Y. Liu, Q. Zhang, M. Wang, S. Lan, Y. Zheng, J. Ma, L. Gu, Y. Shen, P. Yu, S. Zhang, L.-Q. Chen, Y.-H. Lin*, C.-W. Nan*. Ultrahigh–energy density lead-free dielectric films via polymorphic nanodomain design. Science, 365, 578 (2019).
[2] H. Pan†, S. Lan,† S. Xu, Q. Zhang, H. Yao, Y. Liu, F. Meng, E. Guo, L. Gu, D. Yi, X. R. Wang, H. Huang, J. L. MacManus-Driscoll, L.-Q. Chen, K.-J. Jin*, C.-W. Nan*, Y.-H. Lin*. Ultrahigh energy storage in superparaelectric relaxor ferroelectrics. Science, 374, 100 (2021).
[3] H. Pan†, M. Zhu†, E. Banyas†, L. Alaert, M. Acharya, H. Zhang, J. Kim, X. Chen, X. Huang, M. Xu, I. Harris, Z. Tian, F. Ricci, B. Hanrahan, J. E. Spanier, G. Hautier, J. M. LeBeau, J. B. Neaton, L. W. Martin*, Clamping enables enhanced electromechanical responses in antiferroelectric thin films. Nature Materials, 23, 944 (2024).
[4] H. Pan, Z. Tian, M. Acharya, X. Huang, P. Kavle, H. Zhang, L. Wu, D. Chen, J. Carroll, R. Scales, C. J. G. Meyers, K. Coleman, B. Hanrahan, J. E. Spanier, L. W. Martin*, Defect‐induced, Ferroelectric‐like Switching and Adjustable Dielectric Tunability in Antiferroelectrics. Advanced Materials. 35, 2300257, (2023).
[5] B. Yang†, Y. Zhang†, H. Pan†, W. Si, Q. Zhang, Z. Shen, Y. Yu, S. Lan, F. Meng, Y. Liu, H. Huang, J. He, L. Gu, S. Zhang, L. Chen, J. Zhu*, C. Nan*, Y. Lin*, High-entropy enhanced capacitive energy storage. Nature Materials. 21, 1074-1080, (2022).
[6] Y. Liu,† Y. Wang,† J. Ma,† S. Li,† H. Pan*, C.-W. Nan and Y.-H. Lin*. Controllable electrical, magnetoelectric and optical properties of bismuth ferrite via domain engineering. Progress in Materials Science. 127, 100943, (2022).
[7] Y. Liu,† J. Liu,† H. Pan,† X. Cheng, Z. Hong, B. Xu, L.-Q. Chen, C.-W. Nan, Y.-H. Lin*. Phase‐Field Simulations of Tunable Polar Topologies in Lead‐Free Ferroelectric/Paraelectric Multilayers with Ultrahigh Energy Storage Performance. Advanced Materials. 34, 2108772 (2022).
[8] H. Pan,† N. Feng,† X. Xu, W. Li, Q. Zhang, S. Lan, Y. Liu, H. Sha, K. Bi, B. Xu, J. Ma, L. Gu, R. Yu, Y. Shen, X. R. Wang*, J. L. MacManus-Driscoll, C. Chen, C.-W. Nan and Y.-H. Lin*. Enhanced electrical resistivity and dielectric energy storage via defect vacancy complex. Energy Storage Materials. 42, 836 (2021).
[9] H. Pan, Q. Zhang, M. Wang, S. Lan, F. Meng, J. Ma, L. Gu, Y. Shen, P. Yu, Y.-H. Lin* and C.-W. Nan. Enhancements of dielectric and energy storage performances in lead-free films with sandwich architecture. Journal of American Ceramic Society. 102, 936 (2019).
[10] H. Pan, J. Ma, J. Ma, Q. Zhang, X. Liu, B. Guan, L. Gu, X. Zhang, Y. J. Zhang, L. Li, Y. Shen, Y.-H. Lin*, and C.-W. Nan. Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering. Nature Communications. 9, 1813 (2018).
Message to Prospective Students
Our lab warmly welcomes outstanding young scholars (postdoctoral researchers, PhD students, master students, and research assistants) with backgrounds in materials science, physics, chemistry, microelectronics, artificial intelligence, and related fields to join the team. We look forward to diverse perspectives, stimulating innovation, and pooling wisdom for collective progress! Interested candidates are invited to send their CV and research statement (including a summary of achievements, key research skills, and a brief research plan) to the email address panh@pku.edu.cn. Feel free to get in touch!
