Pan Hao, a researcher and doctoral supervisor at the School of Advanced Materials, Peking University Shenzhen Graduate School, has been selected for the 2025 MIT Technology Review Innovators Under 35 (TR35) China list, receiving the "Inventor" honor.
Launched in 1999, the TR35 is one of the world's most recognized awards for young innovators, spanning categories including Visionaries, Pioneers, Inventors, Entrepreneurs, and Humanitarians.
Pan's research focuses on ferroelectric thin-film materials for next-generation microelectronic devices—a field critical to addressing the power consumption and performance demands of integrated circuits in the post-Moore era.
His key contribution is the development of a "multi-configuration nanodomain" design paradigm that decouples the inherent trade-off between polarization and dielectric loss in ferroelectrics. This breakthrough enables simultaneous high energy density and high efficiency in dielectric thin films—a long-standing challenge in the field. He further extended the approach to relaxor ferroelectrics, uncovering the ultra-low-loss "superparaelectric" state, and to antiferroelectric systems, achieving tunable dielectric responses and ultra-high electrostrain through fine defect control and heterointerface engineering.
Rather than relying on novel materials, Pan's work systematically re-engineers existing material systems through deep physical insight—offering a practical pathway to lower-power microdevices, from smartphone chips to advanced sensors.
His findings have been published in journals including Science, Nature Materials , Advanced Materials, and Nature Communications, and have been recognized among the "Top Ten Scientific and Technological Advances in Chinese Universities." He is also a recipient of the Chorafas Young Researcher Award and a co-recipient of the Second Class National Natural Science Award.
The TR35 recognition underscores the global impact of Pan's work in shaping the future of low-power electronics.
